ON Semiconductor - HGT1S10N120BNST

KEY Part #: K6421773

HGT1S10N120BNST Vidiny (USD) [51869pcs Stock]

  • 1 pcs$0.96859
  • 800 pcs$0.96377
  • 1,600 pcs$0.81282
  • 2,400 pcs$0.77411

Ampahany:
HGT1S10N120BNST
Manufacturer:
ON Semiconductor
Famaritana antsipirihany:
IGBT 1200V 35A 298W TO263AB.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Tanjona manokana, Diode - Mpitaovana - Arrays, Diodes - Mpihazakazaka - Iray, Diode - Zener - Arrays, Transistorio - Bipolar (BJT) - Arrays, Diodes - Zener - Iray, Tratrao - TRIACs and Tratrao - SCR - Modules ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGT1S10N120BNST Toetran'ny vokatra

Ampahany : HGT1S10N120BNST
Manufacturer : ON Semiconductor
Description : IGBT 1200V 35A 298W TO263AB
Series : -
Ampahany : Active
IGBT Type : NPT
Volonta - Famoronan'ny mpanangom-bokatra : 1200V
Ankehitriny - Collector (Ic) (Max) : 35A
Ankehitriny - Collector Pulsed (Icm) : 80A
Vce (eo) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Hery - Max : 298W
Miova angovo : 320µJ (on), 800µJ (off)
Karazana fidirana : Standard
Gate Charge : 100nC
Td (on / off) @ 25 ° C : 23ns/165ns
Toe-javatra fitsapana : 960V, 10A, 10 Ohm, 15V
Fotoana Famerenana amin'ny laoniny (trr) : -
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Fitaovana mpamatsy : TO-263AB