Vishay Semiconductor Diodes Division - US1KHE3_A/H

KEY Part #: K6445400

US1KHE3_A/H Vidiny (USD) [717628pcs Stock]

  • 1 pcs$0.05154
  • 3,600 pcs$0.04961

Ampahany:
US1KHE3_A/H
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE GEN PURP 800V 1A DO214AC. Rectifiers 800 Volt 1.0A 75ns 30 Amp IFSM
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Tratrao - TRIACs, Ny thyristors - DIAC, SIDACs, Transistors - JFET, Modules maotera mpamily and Transistors - IGBTs - tokan-tena ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division US1KHE3_A/H electronic components. US1KHE3_A/H can be shipped within 24 hours after order. If you have any demands for US1KHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1KHE3_A/H Toetran'ny vokatra

Ampahany : US1KHE3_A/H
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 800V 1A DO214AC
Series : Automotive, AEC-Q101
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 800V
Ankehitriny - salanisa antonony (Io) : 1A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.7V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 75ns
Ankehitriny - Reverse Leakage @ Vr : 10µA @ 800V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : DO-214AC, SMA
Package Fitaovana mpamatsy : DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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