Vishay Semiconductor Diodes Division - EGP30FHE3/54

KEY Part #: K6447614

[1364pcs Stock]


    Ampahany:
    EGP30FHE3/54
    Manufacturer:
    Vishay Semiconductor Diodes Division
    Famaritana antsipirihany:
    DIODE GEN PURP 300V 3A GP20.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Transistors - FET, MOSFET - RF, Transistor - Tanjona manokana, Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - Single, Diodes - RF, Modules maotera mpamily and Transistorio - Bipolar (BJT) - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Semiconductor Diodes Division EGP30FHE3/54 electronic components. EGP30FHE3/54 can be shipped within 24 hours after order. If you have any demands for EGP30FHE3/54, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EGP30FHE3/54 Toetran'ny vokatra

    Ampahany : EGP30FHE3/54
    Manufacturer : Vishay Semiconductor Diodes Division
    Description : DIODE GEN PURP 300V 3A GP20
    Series : SUPERECTIFIER®
    Ampahany : Obsolete
    Type diode : Standard
    Torohevitra - Reverse DC (Vr) (Max) : 300V
    Ankehitriny - salanisa antonony (Io) : 3A
    Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.25V @ 3A
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Fotoana Famerenana amin'ny laoniny (trr) : 50ns
    Ankehitriny - Reverse Leakage @ Vr : 5µA @ 300V
    Capacitance @ Vr, F : -
    Type Type : Through Hole
    Famonosana / tranga : DO-201AA, DO-27, Axial
    Package Fitaovana mpamatsy : GP20
    Ny mari-pana tsy miasa - Junction : -65°C ~ 150°C

    Mety ho liana koa ianao
    • 1PS193,115

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.

    • 1PS193,135

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.

    • VS-8EWL06FN-M3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 8A TO252AA. Rectifiers 8A 600V 60ns Hyperfast

    • EGL34GHE3/83

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 400V 500MA DO213.

    • EGL34DHE3/83

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 200V 500MA DO213.

    • EGL34FHE3/83

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 300V 500MA DO213.