SI3552DV-T1-GE3 Vidiny (USD) [262736pcs Stock]
- 1 pcs$0.14078
- 3,000 pcs$0.13247
- Ampahany:
- SI3552DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N/P-CH 30V 6-TSOP.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FET, MOSFET - RF, Ny kristianao - SCR, Transistors - IGBTs - Modules, Transistors - IGBTs - tokan-tena and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI3552DV-T1-GE3 electronic components. SI3552DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3552DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3552DV-T1-GE3 Toetran'ny vokatra
Ampahany :
SI3552DV-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 30V 6-TSOP
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N and P-Channel
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
-
Rds On (Max) @ Id, Vgs :
105 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs :
3.2nC @ 5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
1.15W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
SOT-23-6 Thin, TSOT-23-6
Package Fitaovana mpamatsy :
6-TSOP
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