Vishay Siliconix - SQ2325ES-T1_GE3

KEY Part #: K6421073

SQ2325ES-T1_GE3 Vidiny (USD) [344842pcs Stock]

  • 1 pcs$0.10726
  • 3,000 pcs$0.09710

Ampahany:
SQ2325ES-T1_GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET P-CH 150V 840MA TO236.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Modules, Tratrao - SCR - Modules, Modules maotera mpamily, Diode - Mpitaovana - Arrays and Diode - Zener - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SQ2325ES-T1_GE3 electronic components. SQ2325ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2325ES-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ2325ES-T1_GE3 Toetran'ny vokatra

Ampahany : SQ2325ES-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 150V 840MA TO236
Series : Automotive, AEC-Q101, TrenchFET®
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 840mA (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.77 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 250pF @ 50V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 3W (Tc)
Ny mari-pana : -55°C ~ 175°C (TA)
Type Type : Surface Mount
Package Fitaovana mpamatsy : TO-236 (SOT-23)
Famonosana / tranga : TO-236-3, SC-59, SOT-23-3