Infineon Technologies - IRFU9N20D

KEY Part #: K6414658

[12679pcs Stock]


    Ampahany:
    IRFU9N20D
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET N-CH 200V 9.4A I-PAK.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - TRIACs, Diodes - RF, Ny kristianao - SCR, Transistors - FETs, MOSFETs - Single and Transistorio - Bipolar (BJT) - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies IRFU9N20D electronic components. IRFU9N20D can be shipped within 24 hours after order. If you have any demands for IRFU9N20D, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFU9N20D Toetran'ny vokatra

    Ampahany : IRFU9N20D
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 200V 9.4A I-PAK
    Series : HEXFET®
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 9.4A (Tc)
    Fandefasana fiara (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 380 mOhm @ 5.6A, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
    Vgs (Max) : ±30V
    Fampiasana masinina (Ciss) (Max) @ Vds : 560pF @ 25V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 86W (Tc)
    Ny mari-pana : -55°C ~ 175°C (TJ)
    Type Type : Through Hole
    Package Fitaovana mpamatsy : IPAK (TO-251)
    Famonosana / tranga : TO-251-3 Short Leads, IPak, TO-251AA

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