Ampahany :
BSM180C12P2E202
Manufacturer :
Rohm Semiconductor
Description :
BSM180C12P2E202 IS A SIC SILICO
teknolojia :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
204A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
20000pF @ 10V
Fandroahana herinaratra (Max) :
1360W (Tc)
Ny mari-pana :
175°C (TJ)
Type Type :
Chassis Mount
Package Fitaovana mpamatsy :
Module
Famonosana / tranga :
Module