Ampahany :
TSM60NB1R4CH C5G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CHANNEL 600V 3A TO251
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.12nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
257.3pF @ 100V
Fandroahana herinaratra (Max) :
28.4W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Package Fitaovana mpamatsy :
TO-251 (IPAK)
Famonosana / tranga :
TO-251-3 Short Leads, IPak, TO-251AA