Infineon Technologies - BSZ086P03NS3EGATMA1

KEY Part #: K6409530

BSZ086P03NS3EGATMA1 Vidiny (USD) [279894pcs Stock]

  • 1 pcs$0.13215

Ampahany:
BSZ086P03NS3EGATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET P-CH 30V 40A TSDSON-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ086P03NS3EGATMA1 Toetran'ny vokatra

Ampahany : BSZ086P03NS3EGATMA1
Manufacturer : Infineon Technologies
Description : MOSFET P-CH 30V 40A TSDSON-8
Series : OptiMOS™
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 13.5A (Ta), 40A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 8.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs : 57.5nC @ 10V
Vgs (Max) : ±25V
Fampiasana masinina (Ciss) (Max) @ Vds : 4785pF @ 15V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 2.1W (Ta), 69W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TSDSON-8
Famonosana / tranga : 8-PowerTDFN