Vishay Siliconix - SIHP33N60EF-GE3

KEY Part #: K6416286

SIHP33N60EF-GE3 Vidiny (USD) [12863pcs Stock]

  • 1 pcs$3.08931
  • 10 pcs$2.78126
  • 100 pcs$2.28692
  • 500 pcs$1.91606
  • 1,000 pcs$1.66882

Ampahany:
SIHP33N60EF-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 600V 33A TO-220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Mpihazakazaka - Iray, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Modules maotera mpamily, Diode - Zener - Arrays, Transistorio - Bipolar (BJT) - Arrays, Diodes - Zener - Iray, Transistor - Unjunction Programmable and Transistors - JFET ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHP33N60EF-GE3 Toetran'ny vokatra

Ampahany : SIHP33N60EF-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 33A TO-220-3
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 33A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 98 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 155nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 3454pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 278W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-220AB
Famonosana / tranga : TO-220-3