Micron Technology Inc. - MT53D512M64D4RQ-046 WT:E

KEY Part #: K906793

MT53D512M64D4RQ-046 WT:E Vidiny (USD) [867pcs Stock]

  • 1 pcs$59.50738

Ampahany:
MT53D512M64D4RQ-046 WT:E
Manufacturer:
Micron Technology Inc.
Famaritana antsipirihany:
IC DRAM 32G 2133MHZ. DRAM LPDDR4 32G 512MX64 FBGA QDP
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Fandrindrana ny angona - Mifehy fitaovana mifehy f, PMIC - mpitondra fiara Laser, Fandresahana angon-drakitra - Digital amin'ny Anal, Fifandraisana - Telecom, Fandresahana angon-drakitra - Fampahalalana momba , Logic - Latches, Fahatsiarovana - mifehy and Famantaranandro / famantaran-potoana - Timer azo a ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Micron Technology Inc. MT53D512M64D4RQ-046 WT:E electronic components. MT53D512M64D4RQ-046 WT:E can be shipped within 24 hours after order. If you have any demands for MT53D512M64D4RQ-046 WT:E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT53D512M64D4RQ-046 WT:E Toetran'ny vokatra

Ampahany : MT53D512M64D4RQ-046 WT:E
Manufacturer : Micron Technology Inc.
Description : IC DRAM 32G 2133MHZ
Series : -
Ampahany : Active
Karazana fitadidiana : Volatile
Format fahatsiarovana : DRAM
teknolojia : SDRAM - Mobile LPDDR4
Haben'ny fahatsiarovana : 32Gb (512M x 64)
Dingana famantaranandro : 2133MHz
Soraty ny ora mihetsika - Teny, pejy : -
Fotoana fidirana : -
Fampitana fahatsiarovana : -
Volonta - Famatsiana : 1.1V
Ny mari-pana : -30°C ~ 85°C (TC)
Type Type : -
Famonosana / tranga : -
Package Fitaovana mpamatsy : -

Mety ho liana koa ianao
  • IS49RL18320-093EBLI

    ISSI, Integrated Silicon Solution Inc

    IC DRAM 576M PARALLEL 168BGA. DRAM RLDRAM3 Memory,576M Common I/O,1066Mhz

  • IS49RL36160-093EBLI

    ISSI, Integrated Silicon Solution Inc

    IC DRAM 576M PARALLEL 168BGA. DRAM RLDRAM3 Memory, 576M Common I/O, 1066Mhz

  • DS1265W-100IND+

    Maxim Integrated

    IC NVSRAM 8M PARALLEL 36EDIP. NVRAM 3.3V 8M NV SRAM

  • DS1265Y-70IND+

    Maxim Integrated

    IC NVSRAM 8M PARALLEL 36EDIP. NVRAM 8M NV SRAM

  • IS61VF204836B-7.5TQLI

    ISSI, Integrated Silicon Solution Inc

    IC SRAM 72M PARALLEL 100LQFP. SRAM 72Mb,Flowthrough,Sync,2Mb x 36, 2.5V I/O,100 Pin TQFP, RoHS

  • IS61NVP204836B-166TQLI

    ISSI, Integrated Silicon Solution Inc

    IC SRAM 72M PARALLEL 100LQFP. SRAM 72Mb, 7.5ns, 2.5v 2M x 36 Sync SRAM