Infineon Technologies - IPG20N06S4L26ATMA1

KEY Part #: K6524906

IPG20N06S4L26ATMA1 Vidiny (USD) [231025pcs Stock]

  • 1 pcs$0.16010
  • 5,000 pcs$0.14685

Ampahany:
IPG20N06S4L26ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET 2N-CH 60V 20A TDSON-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
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Fomba fandefasana:
Fianakaviana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N06S4L26ATMA1 Toetran'ny vokatra

Ampahany : IPG20N06S4L26ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 60V 20A TDSON-8
Series : OptiMOS™
Ampahany : Active
Type FET : 2 N-Channel (Dual)
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 20A
Rds On (Max) @ Id, Vgs : 26 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds : 1430pF @ 25V
Hery - Max : 33W
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : 8-PowerVDFN
Package Fitaovana mpamatsy : PG-TDSON-8-4

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