Manufacturer :
Diodes Incorporated
Description :
MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Type FET :
N and P-Channel
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.6A, 2.6A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs :
20.4nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1063pF @ 30V
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy :
8-SO