Ampahany :
SIAA00DJ-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 25V
Series :
TrenchFET® Gen IV
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20.1A (Ta), 40A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1090pF @ 12.5V
Fandroahana herinaratra (Max) :
3.5W (Ta), 19.2W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® SC-70-6 Single
Famonosana / tranga :
PowerPAK® SC-70-6