Toshiba Semiconductor and Storage - TK28N65W,S1F

KEY Part #: K6397910

TK28N65W,S1F Vidiny (USD) [16378pcs Stock]

  • 1 pcs$2.76760
  • 30 pcs$2.22509
  • 120 pcs$2.02729
  • 510 pcs$1.64163
  • 1,020 pcs$1.38450

Ampahany:
TK28N65W,S1F
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 650V 27.6A TO247.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
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We specialize in Toshiba Semiconductor and Storage TK28N65W,S1F electronic components. TK28N65W,S1F can be shipped within 24 hours after order. If you have any demands for TK28N65W,S1F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK28N65W,S1F Toetran'ny vokatra

Ampahany : TK28N65W,S1F
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 650V 27.6A TO247
Series : DTMOSIV
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 27.6A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 110 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 3000pF @ 300V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 230W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-247
Famonosana / tranga : TO-247-3

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