Infineon Technologies - BSC252N10NSFGATMA1

KEY Part #: K6420425

BSC252N10NSFGATMA1 Vidiny (USD) [194119pcs Stock]

  • 1 pcs$0.19054
  • 5,000 pcs$0.18290

Ampahany:
BSC252N10NSFGATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 100V 40A TDSON-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Diode - Mpitaovana - Arrays, Transistor - Unjunction Programmable, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - FETs, MOSFETs - Single, Diodes - Miova endrika ny habeny (varicaps, varact and Ny kristianao - SCR ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC252N10NSFGATMA1 Toetran'ny vokatra

Ampahany : BSC252N10NSFGATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 40A TDSON-8
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 7.2A (Ta), 40A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 25.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1100pF @ 50V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 78W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TDSON-8
Famonosana / tranga : 8-PowerTDFN

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