FESB16JT-E3/81 Vidiny (USD) [93548pcs Stock]
- 1 pcs$0.41797
- 800 pcs$0.38285
- 1,600 pcs$0.28592
- 2,400 pcs$0.26686
- 5,600 pcs$0.25415
- Ampahany:
- FESB16JT-E3/81
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE GEN PURP 600V 16A TO263AB. Rectifiers 16 Amp 600 Volt 50ns
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny kristianao - SCR, Transistorio - Bipolar (BJT) - Arrays, Modules maotera mpamily, Transistors - Bipolar (BJT) - Single, mialoha alik, Tratrao - TRIACs, Diodes - RF and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division FESB16JT-E3/81 electronic components. FESB16JT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB16JT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB16JT-E3/81 Toetran'ny vokatra
Ampahany :
FESB16JT-E3/81
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 600V 16A TO263AB
Series :
-
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
600V
Ankehitriny - salanisa antonony (Io) :
16A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.5V @ 16A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
50ns
Ankehitriny - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
145pF @ 4V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Fitaovana mpamatsy :
TO-263AB
Ny mari-pana tsy miasa - Junction :
-65°C ~ 150°C
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