Vishay Semiconductor Diodes Division - G3SBA80L-6000M3/51

KEY Part #: K6541151

[4086pcs Stock]


    Ampahany:
    G3SBA80L-6000M3/51
    Manufacturer:
    Vishay Semiconductor Diodes Division
    Famaritana antsipirihany:
    BRIDGE RECT 1PHASE 800V 2.3A GBU.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Transistors - JFET, Diodes - Zener - Iray, Transistor - FET, MOSFET - Arrays, Diodes - Rectifiers Bridge, Diodes - Mpihazakazaka - Iray and Transistors - FET, MOSFET - RF ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Semiconductor Diodes Division G3SBA80L-6000M3/51 electronic components. G3SBA80L-6000M3/51 can be shipped within 24 hours after order. If you have any demands for G3SBA80L-6000M3/51, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    G3SBA80L-6000M3/51 Toetran'ny vokatra

    Ampahany : G3SBA80L-6000M3/51
    Manufacturer : Vishay Semiconductor Diodes Division
    Description : BRIDGE RECT 1PHASE 800V 2.3A GBU
    Series : -
    Ampahany : Obsolete
    Type diode : Single Phase
    teknolojia : Standard
    Volonta - Torohevitra mihodina (Max) : 800V
    Ankehitriny - salanisa antonony (Io) : 2.3A
    Volonta - Mandrosoa (Vf) (Max) @ Raha : 1V @ 2A
    Ankehitriny - Reverse Leakage @ Vr : 5µA @ 800V
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Through Hole
    Famonosana / tranga : 4-SIP, GBU
    Package Fitaovana mpamatsy : GBU

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