Infineon Technologies - DF200R12PT4B6BOSA1

KEY Part #: K6534172

DF200R12PT4B6BOSA1 Vidiny (USD) [505pcs Stock]

  • 1 pcs$91.86184

Ampahany:
DF200R12PT4B6BOSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
IGBT MODULE VCES 1200V 200A.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistorio - Bipolar (BJT) - Arrays, Diodes - Rectifiers Bridge, Transistors - IGBTs - tokan-tena, Diodes - Zener - Iray and Transistor - FET, MOSFET - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies DF200R12PT4B6BOSA1 electronic components. DF200R12PT4B6BOSA1 can be shipped within 24 hours after order. If you have any demands for DF200R12PT4B6BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF200R12PT4B6BOSA1 Toetran'ny vokatra

Ampahany : DF200R12PT4B6BOSA1
Manufacturer : Infineon Technologies
Description : IGBT MODULE VCES 1200V 200A
Series : -
Ampahany : Active
IGBT Type : Trench Field Stop
Configuration : Three Phase Inverter
Volonta - Famoronan'ny mpanangom-bokatra : 1200V
Ankehitriny - Collector (Ic) (Max) : 300A
Hery - Max : 1100W
Vce (eo) (Max) @ Vge, Ic : 2.1V @ 15V, 200A
Ankehitriny - Collector Cutoff (Max) : 15µA
Fampitahana Input (Cies) @ Vce : 12.5nF @ 25V
fahan'ny : Standard
NTC Thermistor : Yes
Ny mari-pana : -40°C ~ 150°C
Type Type : Chassis Mount
Famonosana / tranga : Module
Package Fitaovana mpamatsy : Module