Ampahany :
SI4829DY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 20V 2A 8-SOIC
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
215 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
210pF @ 10V
Fihetsika FET :
Schottky Diode (Isolated)
Fandroahana herinaratra (Max) :
2W (Ta), 3.1W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SO
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)