Taiwan Semiconductor Corporation - RS1JLHM2G

KEY Part #: K6433480

RS1JLHM2G Vidiny (USD) [2000457pcs Stock]

  • 1 pcs$0.01849

Ampahany:
RS1JLHM2G
Manufacturer:
Taiwan Semiconductor Corporation
Famaritana antsipirihany:
DIODE GEN PURP 600V 800MA SUBSMA. Rectifiers 250ns 0.8A 600V Fs Recov Rectifier
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - RF, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - TRIACs, Transistors - JFET, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - tokan-tena ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Taiwan Semiconductor Corporation RS1JLHM2G electronic components. RS1JLHM2G can be shipped within 24 hours after order. If you have any demands for RS1JLHM2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1JLHM2G Toetran'ny vokatra

Ampahany : RS1JLHM2G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 600V 800MA SUBSMA
Series : Automotive, AEC-Q101
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 600V
Ankehitriny - salanisa antonony (Io) : 800mA
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.3V @ 800mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 250ns
Ankehitriny - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : DO-219AB
Package Fitaovana mpamatsy : Sub SMA
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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