JAN1N5809URS Vidiny (USD) [4803pcs Stock]
- 1 pcs$9.06350
- 100 pcs$9.01841
- Ampahany:
- JAN1N5809URS
- Manufacturer:
- Microsemi Corporation
- Famaritana antsipirihany:
- DIODE GEN PURP 100V 3A BPKG. Rectifiers Rectifier
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - Unjunction Programmable, Transistors - FETs, MOSFETs - Single, Tratrao - TRIACs, Transistorio - Bipolar (BJT) - Arrays, Transistors - FET, MOSFET - RF, Transistors - IGBTs - tokan-tena and Transistor - FET, MOSFET - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Microsemi Corporation JAN1N5809URS electronic components. JAN1N5809URS can be shipped within 24 hours after order. If you have any demands for JAN1N5809URS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN1N5809URS Toetran'ny vokatra
Ampahany :
JAN1N5809URS
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 100V 3A BPKG
Series :
Military, MIL-PRF-19500/477
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
100V
Ankehitriny - salanisa antonony (Io) :
3A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
875mV @ 4A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
30ns
Ankehitriny - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
60pF @ 10V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
SQ-MELF, B
Package Fitaovana mpamatsy :
B, SQ-MELF
Ny mari-pana tsy miasa - Junction :
-65°C ~ 175°C
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