Infineon Technologies - BSO615CT

KEY Part #: K6524518

[3805pcs Stock]


    Ampahany:
    BSO615CT
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET N/P-CH 60V 3.1A/2A 8SOIC.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistor - FET, MOSFET - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies BSO615CT electronic components. BSO615CT can be shipped within 24 hours after order. If you have any demands for BSO615CT, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSO615CT Toetran'ny vokatra

    Ampahany : BSO615CT
    Manufacturer : Infineon Technologies
    Description : MOSFET N/P-CH 60V 3.1A/2A 8SOIC
    Series : SIPMOS®
    Ampahany : Obsolete
    Type FET : N and P-Channel
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 60V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 3.1A, 2A
    Rds On (Max) @ Id, Vgs : 110 mOhm @ 3.1A, 10V
    Vgs (th) (Max) @ Id : 2V @ 20µA
    Gate Charge (Qg) (Max) @ Vgs : 22.5nC @ 10V
    Fampiasana masinina (Ciss) (Max) @ Vds : 380pF @ 25V
    Hery - Max : 2W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : 8-SOIC (0.154", 3.90mm Width)
    Package Fitaovana mpamatsy : PG-DSO-8