IPB025N10N3GE8187ATMA1 Vidiny (USD) [28645pcs Stock]
- 1 pcs$1.43873
- Ampahany:
- IPB025N10N3GE8187ATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 100V 180A TO263-7.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - RF, Tratrao - TRIACs, Transistors - IGBTs - Modules, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - Single, mialoha alik, Ny kristianao - SCR, Transistors - IGBTs - tokan-tena and Modules maotera mpamily ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPB025N10N3GE8187ATMA1 electronic components. IPB025N10N3GE8187ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB025N10N3GE8187ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB025N10N3GE8187ATMA1 Toetran'ny vokatra
Ampahany :
IPB025N10N3GE8187ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 180A TO263-7
Series :
OptiMOS™
Ampahany :
Not For New Designs
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
180A
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
14800pF @ 50V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
300W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO263-7
Famonosana / tranga :
TO-263-7, D²Pak (6 Leads + Tab)
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