BYG10MHE3_A/I Vidiny (USD) [597046pcs Stock]
- 1 pcs$0.06195
- 7,500 pcs$0.05664
- Ampahany:
- BYG10MHE3_A/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE AVALANCHE 1KV 1.5A DO214AC. Rectifiers 1.5A,1000V,STD,AVAL AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistor - Tanjona manokana, Ny kristianao - SCR, Transistors - Bipolar (BJT) - Single, Transistors - JFET, Tratrao - TRIACs, Transistors - IGBTs - Tafidina and Transistors - IGBTs - tokan-tena ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division BYG10MHE3_A/I electronic components. BYG10MHE3_A/I can be shipped within 24 hours after order. If you have any demands for BYG10MHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG10MHE3_A/I Toetran'ny vokatra
Ampahany :
BYG10MHE3_A/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE AVALANCHE 1KV 1.5A DO214AC
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Avalanche
Torohevitra - Reverse DC (Vr) (Max) :
1000V
Ankehitriny - salanisa antonony (Io) :
1.5A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.15V @ 1.5A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
4µs
Ankehitriny - Reverse Leakage @ Vr :
1µA @ 1000V
Capacitance @ Vr, F :
-
Type Type :
Surface Mount
Famonosana / tranga :
DO-214AC, SMA
Package Fitaovana mpamatsy :
DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction :
-55°C ~ 150°C
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