Taiwan Semiconductor Corporation - SF2008GHC0G

KEY Part #: K6429093

SF2008GHC0G Vidiny (USD) [222668pcs Stock]

  • 1 pcs$0.16611

Ampahany:
SF2008GHC0G
Manufacturer:
Taiwan Semiconductor Corporation
Famaritana antsipirihany:
DIODE GEN PURP 600V 20A TO220AB.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - tokan-tena, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, mialoha alik ...
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We specialize in Taiwan Semiconductor Corporation SF2008GHC0G electronic components. SF2008GHC0G can be shipped within 24 hours after order. If you have any demands for SF2008GHC0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SF2008GHC0G Toetran'ny vokatra

Ampahany : SF2008GHC0G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 600V 20A TO220AB
Series : Automotive, AEC-Q101
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 600V
Ankehitriny - salanisa antonony (Io) : 20A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.7V @ 10A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 35ns
Ankehitriny - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 80pF @ 4V, 1MHz
Type Type : Through Hole
Famonosana / tranga : TO-220-3
Package Fitaovana mpamatsy : TO-220AB
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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