SF2008GHC0G Vidiny (USD) [222668pcs Stock]
- 1 pcs$0.16611
- Ampahany:
- SF2008GHC0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Famaritana antsipirihany:
- DIODE GEN PURP 600V 20A TO220AB.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - Tafidina, Tratrao - SCR - Modules, Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FETs, MOSFETs - Single, Transistors - JFET and Diode - Mpitaovana - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Taiwan Semiconductor Corporation SF2008GHC0G electronic components. SF2008GHC0G can be shipped within 24 hours after order. If you have any demands for SF2008GHC0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SF2008GHC0G Toetran'ny vokatra
Ampahany :
SF2008GHC0G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
DIODE GEN PURP 600V 20A TO220AB
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
600V
Ankehitriny - salanisa antonony (Io) :
20A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.7V @ 10A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
35ns
Ankehitriny - Reverse Leakage @ Vr :
5µA @ 600V
Capacitance @ Vr, F :
80pF @ 4V, 1MHz
Type Type :
Through Hole
Famonosana / tranga :
TO-220-3
Package Fitaovana mpamatsy :
TO-220AB
Ny mari-pana tsy miasa - Junction :
-55°C ~ 150°C
Vaovao farany
Mety ho liana koa ianao
-
-
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1SS190TE85LF
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC59-3. Diodes - General Purpose, Power, Switching 0.1A 80V Switching Diode S-Mini High
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