Infineon Technologies - DF200R12W1H3B27BOMA1

KEY Part #: K6534604

DF200R12W1H3B27BOMA1 Vidiny (USD) [1809pcs Stock]

  • 1 pcs$23.94315

Ampahany:
DF200R12W1H3B27BOMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
IGBT MODULE VCES 1200V 200A.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Ny kristianao - SCR, Transistors - IGBTs - Modules, Transistor - FET, MOSFET - Arrays, Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - RF and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies DF200R12W1H3B27BOMA1 electronic components. DF200R12W1H3B27BOMA1 can be shipped within 24 hours after order. If you have any demands for DF200R12W1H3B27BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF200R12W1H3B27BOMA1 Toetran'ny vokatra

Ampahany : DF200R12W1H3B27BOMA1
Manufacturer : Infineon Technologies
Description : IGBT MODULE VCES 1200V 200A
Series : -
Ampahany : Active
IGBT Type : -
Configuration : 2 Independent
Volonta - Famoronan'ny mpanangom-bokatra : 1200V
Ankehitriny - Collector (Ic) (Max) : 30A
Hery - Max : 375W
Vce (eo) (Max) @ Vge, Ic : 1.3V @ 15V, 30A
Ankehitriny - Collector Cutoff (Max) : 1mA
Fampitahana Input (Cies) @ Vce : 2nF @ 25V
fahan'ny : Standard
NTC Thermistor : Yes
Ny mari-pana : -40°C ~ 150°C
Type Type : Chassis Mount
Famonosana / tranga : Module
Package Fitaovana mpamatsy : Module

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