Infineon Technologies - IPB120N08S403ATMA1

KEY Part #: K6418107

IPB120N08S403ATMA1 Vidiny (USD) [51682pcs Stock]

  • 1 pcs$0.75655
  • 1,000 pcs$0.69410

Ampahany:
IPB120N08S403ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Tanjona manokana, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Zener - Iray, Transistor - FET, MOSFET - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - Single and Transistors - FET, MOSFET - RF ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N08S403ATMA1 Toetran'ny vokatra

Ampahany : IPB120N08S403ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH TO263-3
Series : Automotive, AEC-Q101, OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 120A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 223µA
Gate Charge (Qg) (Max) @ Vgs : 167nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 11550pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 278W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO263-3-2
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB