Microsemi Corporation - JANTX1N5811US

KEY Part #: K6446245

JANTX1N5811US Vidiny (USD) [7541pcs Stock]

  • 1 pcs$6.93221
  • 10 pcs$6.30201
  • 25 pcs$5.82940
  • 100 pcs$5.35671
  • 250 pcs$4.88407

Ampahany:
JANTX1N5811US
Manufacturer:
Microsemi Corporation
Famaritana antsipirihany:
DIODE GEN PURP 150V 3A B-MELF. ESD Suppressors / TVS Diodes D MET 6A SFST 150V HR SM
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FETs, MOSFETs - Single, Ny thyristors - DIAC, SIDACs, Transistor - Tanjona manokana, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, Diode - Mpitaovana - Arrays and Transistor - Unjunction Programmable ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N5811US Toetran'ny vokatra

Ampahany : JANTX1N5811US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 150V 3A B-MELF
Series : Military, MIL-PRF-19500/477
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 150V
Ankehitriny - salanisa antonony (Io) : 3A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 875mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 30ns
Ankehitriny - Reverse Leakage @ Vr : 5µA @ 150V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : SQ-MELF, B
Package Fitaovana mpamatsy : B, SQ-MELF
Ny mari-pana tsy miasa - Junction : -65°C ~ 175°C

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