Infineon Technologies - BCR133E6327HTSA1

KEY Part #: K6528406

BCR133E6327HTSA1 Vidiny (USD) [2380284pcs Stock]

  • 1 pcs$0.01554
  • 3,000 pcs$0.01408
  • 6,000 pcs$0.01270
  • 15,000 pcs$0.01105
  • 30,000 pcs$0.00994
  • 75,000 pcs$0.00884
  • 150,000 pcs$0.00736

Ampahany:
BCR133E6327HTSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
TRANS PREBIAS NPN 200MW SOT23-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - tokan-tena, Ny thyristors - DIAC, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Tafidina, Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays and Transistors - Bipolar (BJT) - Single, mialoha alik ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BCR133E6327HTSA1 Toetran'ny vokatra

Ampahany : BCR133E6327HTSA1
Manufacturer : Infineon Technologies
Description : TRANS PREBIAS NPN 200MW SOT23-3
Series : -
Ampahany : Last Time Buy
Type Transistor : NPN - Pre-Biased
Ankehitriny - Collector (Ic) (Max) : 100mA
Volonta - Famoronan'ny mpanangom-bokatra : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
Ankehitriny - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Tetezamita : 130MHz
Hery - Max : 200mW
Type Type : Surface Mount
Famonosana / tranga : TO-236-3, SC-59, SOT-23-3
Package Fitaovana mpamatsy : SOT-23-3

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