[3841pcs Stock]
- Ampahany:
- SI5511DC-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N/P-CH 30V 4A 1206-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Modules maotera mpamily, Tratrao - TRIACs, Transistors - IGBTs - Tafidina, Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI5511DC-T1-E3 electronic components. SI5511DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5511DC-T1-E3 Toetran'ny vokatra
Ampahany :
SI5511DC-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 30V 4A 1206-8
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
N and P-Channel
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4A, 3.6A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.1nC @ 5V
Fampiasana masinina (Ciss) (Max) @ Vds :
435pF @ 15V
Hery - Max :
3.1W, 2.6W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SMD, Flat Lead
Package Fitaovana mpamatsy :
1206-8 ChipFET™
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