Vishay Siliconix - SI5511DC-T1-E3

KEY Part #: K6524412

[3841pcs Stock]


    Ampahany:
    SI5511DC-T1-E3
    Manufacturer:
    Vishay Siliconix
    Famaritana antsipirihany:
    MOSFET N/P-CH 30V 4A 1206-8.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Unjunction Programmable, Transistors - IGBTs - Modules, Diodes - Rectifiers Bridge, Tratrao - TRIACs and Diodes - Miova endrika ny habeny (varicaps, varact ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Siliconix SI5511DC-T1-E3 electronic components. SI5511DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5511DC-T1-E3 Toetran'ny vokatra

    Ampahany : SI5511DC-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N/P-CH 30V 4A 1206-8
    Series : TrenchFET®
    Ampahany : Obsolete
    Type FET : N and P-Channel
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 30V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4A, 3.6A
    Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 7.1nC @ 5V
    Fampiasana masinina (Ciss) (Max) @ Vds : 435pF @ 15V
    Hery - Max : 3.1W, 2.6W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : 8-SMD, Flat Lead
    Package Fitaovana mpamatsy : 1206-8 ChipFET™