ITT Cannon, LLC - 120220-0206

KEY Part #: K7359508

120220-0206 Vidiny (USD) [550125pcs Stock]

  • 1 pcs$0.06724
  • 3,200 pcs$0.06328
  • 6,400 pcs$0.05932
  • 9,600 pcs$0.05537
  • 16,000 pcs$0.05339
  • 32,000 pcs$0.05260

Ampahany:
120220-0206
Manufacturer:
ITT Cannon, LLC
Famaritana antsipirihany:
UNIVERSAL CONTACT 4MM SMD. Battery Contacts
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: RF Detector, RF Misc IC sy Modules, RF Transceiver ICs, RF Power Controller IC, RF mpahazo, RF Antennasy, Miova RF and RF Front End (LNA + PA) ...
Ny tombony azo amin'ny fifaninanana:
We specialize in ITT Cannon, LLC 120220-0206 electronic components. 120220-0206 can be shipped within 24 hours after order. If you have any demands for 120220-0206, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

120220-0206 Toetran'ny vokatra

Ampahany : 120220-0206
Manufacturer : ITT Cannon, LLC
Description : UNIVERSAL CONTACT 4MM SMD
Series : -
Ampahany : Active
Type : Shield Finger, Pre-Loaded
endrika : -
sakany : 0.043" (1.10mm)
Length : 0.194" (4.92mm)
Haavo : 0.157" (4.00mm)
Material : Beryllium Copper
voapetaka : Nickel
Fametahana - matevina : 118.11µin (3.00µm)
Fomba fampiakarana : Solder
Ny mari-pana : -

Mety ho liana koa ianao
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.