NXP USA Inc. - MMA8652FCR1

KEY Part #: K7359483

MMA8652FCR1 Vidiny (USD) [112236pcs Stock]

  • 1 pcs$0.32955
  • 3,000 pcs$0.25945
  • 6,000 pcs$0.24323
  • 9,000 pcs$0.23107
  • 15,000 pcs$0.22296

Ampahany:
MMA8652FCR1
Manufacturer:
NXP USA Inc.
Famaritana antsipirihany:
ACCELEROMETER 2-8G I2C 10DFN. Accelerometers 3-axis 2g/4g/8g 12 bit
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Magnetic Sensors - Linear, Compass (IC), Alatra sensor, Interface an'ny Sensor - Junction Blocks, LVDT Transducers (Transpormer miovaova ny tsipika), Sensor Optical - Detector Photo - Mpandraharaha la, Force sensor, Mpampita sary, Kamera and Magnetic Sensors - Nifamadika (Solid State) ...
Ny tombony azo amin'ny fifaninanana:
We specialize in NXP USA Inc. MMA8652FCR1 electronic components. MMA8652FCR1 can be shipped within 24 hours after order. If you have any demands for MMA8652FCR1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMA8652FCR1 Toetran'ny vokatra

Ampahany : MMA8652FCR1
Manufacturer : NXP USA Inc.
Description : ACCELEROMETER 2-8G I2C 10DFN
Series : -
Ampahany : Active
Type : Digital
mpiray : X, Y, Z
Range acceleration : ±2g, 4g, 8g
Sensitivity (LSB / g) : 1024 (±2g) ~ 256 (±8g)
Sensitivity (mV / g) : -
passante : 0.78Hz ~ 400Hz
Type output : I²C
Volonta - Famatsiana : 1.95V ~ 3.6V
Toetoetra : Sleep Mode
Ny mari-pana : -40°C ~ 85°C (TA)
Type Type : Surface Mount
Famonosana / tranga : 10-VFDFN
Package Fitaovana mpamatsy : 10-DFN (2x2)

Mety ho liana koa ianao
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • ACS712ELCTR-05B-T

    Allegro MicroSystems, LLC

    SENSOR CURRENT HALL 5A AC/DC.