Description :
MOSFET N-CH
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
3000V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
21 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
73nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1890pF @ 25V
Fandroahana herinaratra (Max) :
160W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Package Fitaovana mpamatsy :
ISOPLUS i4-PAC™
Famonosana / tranga :
ISOPLUSi5-Pak™