BYG10J-M3/TR Vidiny (USD) [742232pcs Stock]
- 1 pcs$0.05071
- 12,600 pcs$0.05046
- Ampahany:
- BYG10J-M3/TR
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE AVALANCHE 600V 1.5A. Rectifiers 1.5A,600V VGSC-STD Avalanche SMD
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - tokan-tena, Tratrao - TRIACs, Ny kristianao - SCR, Diodes - Rectifiers Bridge, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Mpihazakazaka - Iray and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division BYG10J-M3/TR electronic components. BYG10J-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG10J-M3/TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG10J-M3/TR Toetran'ny vokatra
Ampahany :
BYG10J-M3/TR
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE AVALANCHE 600V 1.5A
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Avalanche
Torohevitra - Reverse DC (Vr) (Max) :
600V
Ankehitriny - salanisa antonony (Io) :
1.5A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.15V @ 1.5A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
4µs
Ankehitriny - Reverse Leakage @ Vr :
1µA @ 600V
Capacitance @ Vr, F :
-
Type Type :
Surface Mount
Famonosana / tranga :
DO-214AC, SMA
Package Fitaovana mpamatsy :
DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction :
-55°C ~ 150°C
Vaovao farany
Mety ho liana koa ianao
-
VS-6EWL06FN-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 6A TO252AA. Rectifiers 6A 600V 59ns Ultrafast
-
SD103A-TAP
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V SGL DO35. Schottky Diodes & Rectifiers 5uA 40 Volt 15A IFSM
-
BAV19-TAP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 250MA DO35. Diodes - General Purpose, Power, Switching 120 Volt 625mA
-
BAV17-TR
Vishay Semiconductor Diodes Division
DIODE GEN PURP 20V 250MA DO35. Diodes - General Purpose, Power, Switching 25 Volt 625mA
-
1N4454-TAP
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA DO204AH. Rectifiers Vr/100V Io/10mA
-
1N4454-TR
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA DO204AH. Diodes - General Purpose, Power, Switching Vr/100V Io/10mA
Faritra mafana
- IDD12SG60CXTMA2
- S1MFL RVG
- RGP10J-5025M3/73
- JAN1N1190
- R4260F
- R9G22011ASOO
- MURS120HE3/52T
- IDW12G65C5FKSA1
- SB040-E3/54
- NSRM30CM3T5G
- AR3PJHM3/86A
- VS-60CPF02PBF
- VS-150SQ035
- RGP02-14E-M3/73
- RS1GHE3/5AT
- RGP5020HE3/54
- SB160A-E3/73
- GP15KHE3/73
- 1N4937L-T
- MR7510-BP
- JAN1N6629US
- STTH40P03SFP
- BAS29_D87Z
- D4015L
- VS-12TQ040PBF
- SS16T3
- MBRB745
- RS3G-13
- 20ETS12S
- 1PS59SB20,115
- MBRM120ET1H
- ER1D-TP
- 1N4935-TP
- MUR110-AP
- STPS2H100UF
- RU 2V1
- SK56C M6G
- ESH2CHE3_A/I
- BA159GPE-E3/73
- LL4448-GS08