Nexperia USA Inc. - PSMN1R6-30PL,127

KEY Part #: K6408210

PSMN1R6-30PL,127 Vidiny (USD) [29134pcs Stock]

  • 1 pcs$1.41465
  • 10 pcs$1.27715
  • 100 pcs$0.97375
  • 500 pcs$0.75735
  • 1,000 pcs$0.62753

Ampahany:
PSMN1R6-30PL,127
Manufacturer:
Nexperia USA Inc.
Famaritana antsipirihany:
MOSFET N-CH 30V 100A TO220AB.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - RF, Transistor - FET, MOSFET - Arrays, Diode - Mpitaovana - Arrays, Transistors - IGBTs - Tafidina, Ny kristianao - SCR, Transistors - JFET, Transistorio - Bipolar (BJT) - Arrays and Diodes - Rectifiers Bridge ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN1R6-30PL,127 Toetran'ny vokatra

Ampahany : PSMN1R6-30PL,127
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 30V 100A TO220AB
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 212nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 12493pF @ 12V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 306W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-220AB
Famonosana / tranga : TO-220-3

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