Vishay Semiconductor Diodes Division - BYG23M-E3/TR3

KEY Part #: K6458378

BYG23M-E3/TR3 Vidiny (USD) [751658pcs Stock]

  • 1 pcs$0.04921
  • 7,500 pcs$0.04087
  • 15,000 pcs$0.03824
  • 37,500 pcs$0.03516

Ampahany:
BYG23M-E3/TR3
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5 Amp 1000 Volt
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Ny thyristors - DIAC, SIDACs, Transistor - FET, MOSFET - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Tratrao - TRIACs and Transistorio - Bipolar (BJT) - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Semiconductor Diodes Division BYG23M-E3/TR3 electronic components. BYG23M-E3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG23M-E3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG23M-E3/TR3 Toetran'ny vokatra

Ampahany : BYG23M-E3/TR3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 1KV 1.5A
Series : -
Ampahany : Active
Type diode : Avalanche
Torohevitra - Reverse DC (Vr) (Max) : 1000V
Ankehitriny - salanisa antonony (Io) : 1.5A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.7V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 75ns
Ankehitriny - Reverse Leakage @ Vr : 5µA @ 1000V
Capacitance @ Vr, F : -
Type Type : Surface Mount
Famonosana / tranga : DO-214AC, SMA
Package Fitaovana mpamatsy : DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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