IXYS - IXFH7N100P

KEY Part #: K6395098

IXFH7N100P Vidiny (USD) [14573pcs Stock]

  • 1 pcs$2.82783

Ampahany:
IXFH7N100P
Manufacturer:
IXYS
Famaritana antsipirihany:
MOSFET N-CH.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - Tafidina, Tratrao - TRIACs, Diodes - Zener - Iray, Transistors - IGBTs - Modules, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact and Transistor - Tanjona manokana ...
Ny tombony azo amin'ny fifaninanana:
We specialize in IXYS IXFH7N100P electronic components. IXFH7N100P can be shipped within 24 hours after order. If you have any demands for IXFH7N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH7N100P Toetran'ny vokatra

Ampahany : IXFH7N100P
Manufacturer : IXYS
Description : MOSFET N-CH
Series : HiPerFET™, Polar™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 2590pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 300W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-247
Famonosana / tranga : TO-247-3