IRFB4227PBF Vidiny (USD) [26568pcs Stock]
- 1 pcs$1.30006
- 10 pcs$1.17270
- 100 pcs$0.89407
- 500 pcs$0.69538
- 1,000 pcs$0.57618
- Ampahany:
- IRFB4227PBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 200V 65A TO-220AB.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Diode - Zener - Arrays, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - Tafidina, Tratrao - TRIACs, Transistor - FET, MOSFET - Arrays and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRFB4227PBF electronic components. IRFB4227PBF can be shipped within 24 hours after order. If you have any demands for IRFB4227PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB4227PBF Toetran'ny vokatra
Ampahany :
IRFB4227PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 65A TO-220AB
Series :
HEXFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
65A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
24 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
4600pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
330W (Tc)
Ny mari-pana :
-40°C ~ 175°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220AB
Famonosana / tranga :
TO-220-3
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