Ampahany :
SIHB25N50E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 500V 26A TO263
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
26A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
145 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1980pF @ 100V
Fandroahana herinaratra (Max) :
250W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-263 (D²Pak)
Famonosana / tranga :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB