[12801pcs Stock]
- Ampahany:
- STB11NM60N-1
- Manufacturer:
- STMicroelectronics
- Famaritana antsipirihany:
- MOSFET N-CH 600V 10A I2PAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistors - IGBTs - tokan-tena, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, mialoha alik, Modules maotera mpamily, Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in STMicroelectronics STB11NM60N-1 electronic components. STB11NM60N-1 can be shipped within 24 hours after order. If you have any demands for STB11NM60N-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB11NM60N-1 Toetran'ny vokatra
Ampahany :
STB11NM60N-1
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 10A I2PAK
Series :
MDmesh™ II
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±25V
Fampiasana masinina (Ciss) (Max) @ Vds :
850pF @ 50V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
90W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
I2PAK
Famonosana / tranga :
TO-262-3 Long Leads, I²Pak, TO-262AA
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