Ampahany :
IPS65R1K0CEAKMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 4.3A TO-251-3
Ampahany :
Not For New Designs
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4.3A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
15.3nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
328pF @ 100V
Fandroahana herinaratra (Max) :
37W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Package Fitaovana mpamatsy :
TO-251
Famonosana / tranga :
TO-251-3 Stub Leads, IPak