TK31J60W,S1VQ Vidiny (USD) [11067pcs Stock]
- 1 pcs$4.09851
- 25 pcs$3.35902
- 100 pcs$3.03127
- 500 pcs$2.53971
- Ampahany:
- TK31J60W,S1VQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N CH 600V 30.8A TO-3PN.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Tratrao - TRIACs, Modules maotera mpamily, Transistor - Unjunction Programmable, Ny thyristors - DIAC, SIDACs, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - RF and Ny kristianao - SCR ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TK31J60W,S1VQ electronic components. TK31J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK31J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31J60W,S1VQ Toetran'ny vokatra
Ampahany :
TK31J60W,S1VQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 600V 30.8A TO-3PN
Series :
DTMOSIV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
30.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
3000pF @ 300V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
230W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-3P(N)
Famonosana / tranga :
TO-3P-3, SC-65-3
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