ESH3BHE3_A/I Vidiny (USD) [331777pcs Stock]
- 1 pcs$0.11764
- 3,500 pcs$0.11706
- Ampahany:
- ESH3BHE3_A/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE GEN PURP 100V 3A DO214AB. Rectifiers 100V 3.0A 25ns Glass Passivated
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Transistors - FETs, MOSFETs - Single, Ny kristianao - SCR, Transistor - Unjunction Programmable and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division ESH3BHE3_A/I electronic components. ESH3BHE3_A/I can be shipped within 24 hours after order. If you have any demands for ESH3BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH3BHE3_A/I Toetran'ny vokatra
Ampahany :
ESH3BHE3_A/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 100V 3A DO214AB
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
100V
Ankehitriny - salanisa antonony (Io) :
3A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
900mV @ 3A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
40ns
Ankehitriny - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
70pF @ 4V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
DO-214AB, SMC
Package Fitaovana mpamatsy :
DO-214AB (SMC)
Ny mari-pana tsy miasa - Junction :
-55°C ~ 175°C
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