[1979pcs Stock]
- Ampahany:
- SIA850DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 190V 0.95A SC70-6.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistors - IGBTs - Tafidina, Tratrao - SCR - Modules, Tratrao - TRIACs, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIA850DJ-T1-GE3 electronic components. SIA850DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA850DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA850DJ-T1-GE3 Toetran'ny vokatra
Ampahany :
SIA850DJ-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 190V 0.95A SC70-6
Series :
LITTLE FOOT®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
190V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
950mA (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
3.8 Ohm @ 360mA, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 10V
Vgs (Max) :
±16V
Fampiasana masinina (Ciss) (Max) @ Vds :
90pF @ 100V
Fihetsika FET :
Schottky Diode (Isolated)
Fandroahana herinaratra (Max) :
1.9W (Ta), 7W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® SC-70-6 Dual
Famonosana / tranga :
PowerPAK® SC-70-6 Dual
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