Manufacturer :
Microsemi Corporation
Description :
POWER MOSFET - SIC
teknolojia :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
55 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
235nC @ 20V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Fandroahana herinaratra (Max) :
555W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Package Fitaovana mpamatsy :
TO-247
Famonosana / tranga :
TO-247-3