Infineon Technologies - BSO615NGHUMA1

KEY Part #: K6523322

BSO615NGHUMA1 Vidiny (USD) [209768pcs Stock]

  • 1 pcs$0.17633

Ampahany:
BSO615NGHUMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET 2N-CH 60V 2.6A 8SOIC.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - JFET, Diodes - Rectifiers Bridge, Diode - Zener - Arrays, Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diode - Mpitaovana - Arrays and Diodes - Miova endrika ny habeny (varicaps, varact ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSO615NGHUMA1 Toetran'ny vokatra

Ampahany : BSO615NGHUMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 60V 2.6A 8SOIC
Series : SIPMOS®
Ampahany : Active
Type FET : 2 N-Channel (Dual)
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 2.6A
Rds On (Max) @ Id, Vgs : 150 mOhm @ 2.6A, 4.5V
Vgs (th) (Max) @ Id : 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds : 380pF @ 25V
Hery - Max : 2W
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : 8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy : PG-DSO-8

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