Infineon Technologies - BSC500N20NS3GATMA1

KEY Part #: K6419484

BSC500N20NS3GATMA1 Vidiny (USD) [114454pcs Stock]

  • 1 pcs$0.32316
  • 5,000 pcs$0.29653

Ampahany:
BSC500N20NS3GATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 200V 24A TDSON-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - RF, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - IGBTs - tokan-tena, Transistor - FET, MOSFET - Arrays and Ny kristianao - SCR ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies BSC500N20NS3GATMA1 electronic components. BSC500N20NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC500N20NS3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC500N20NS3GATMA1 Toetran'ny vokatra

Ampahany : BSC500N20NS3GATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 200V 24A TDSON-8
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 24A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id : 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1580pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 96W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TDSON-8
Famonosana / tranga : 8-PowerTDFN

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