Infineon Technologies - IPP35CN10N G

KEY Part #: K6407165

[1067pcs Stock]


    Ampahany:
    IPP35CN10N G
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET N-CH 100V 27A TO220-3.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Zener - Iray, Transistor - FET, MOSFET - Arrays, Ny kristianao - SCR, Diodes - RF, Transistor - Tanjona manokana, Diodes - Rectifiers Bridge, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - Bipolar (BJT) - Single, mialoha alik ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies IPP35CN10N G electronic components. IPP35CN10N G can be shipped within 24 hours after order. If you have any demands for IPP35CN10N G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP35CN10N G Toetran'ny vokatra

    Ampahany : IPP35CN10N G
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 100V 27A TO220-3
    Series : OptiMOS™
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 27A (Tc)
    Fandefasana fiara (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 35 mOhm @ 27A, 10V
    Vgs (th) (Max) @ Id : 4V @ 29µA
    Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
    Vgs (Max) : ±20V
    Fampiasana masinina (Ciss) (Max) @ Vds : 1570pF @ 50V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 58W (Tc)
    Ny mari-pana : -55°C ~ 175°C (TJ)
    Type Type : Through Hole
    Package Fitaovana mpamatsy : PG-TO220-3
    Famonosana / tranga : TO-220-3