[100pcs Stock]
- Ampahany:
- BSP300L6327HUSA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 800V 190MA SOT-223.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - Modules, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable, Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSP300L6327HUSA1 electronic components. BSP300L6327HUSA1 can be shipped within 24 hours after order. If you have any demands for BSP300L6327HUSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP300L6327HUSA1 Toetran'ny vokatra
Ampahany :
BSP300L6327HUSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 800V 190MA SOT-223
Series :
SIPMOS®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
190mA (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 Ohm @ 190mA, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
230pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
1.8W (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-SOT223-4
Famonosana / tranga :
TO-261-4, TO-261AA
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